NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The NE68019 / 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc

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NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

文件：241.03 Kbytes 页数：12 Pages

RENESAS

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NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

文件：61.27 Kbytes 页数：10 Pages

NEC

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Small Signal Silicon Bipolars

NPN Silicon Amplifier and Oscillator Transistor (Same as NE68019)

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NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

文件：61.27 Kbytes 页数：10 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

文件：241.03 Kbytes 页数：12 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

文件：241.03 Kbytes 页数：12 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION\nThe 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pa • Low Voltage Use.\n• High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)\n• Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)\n• Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)\n• High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)\n• Ultra Super Mini Mold Package. ;

Renesas

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Package：SOT-523；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 8GHZ SOT523

CEL

Package：SOT-523；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 8GHZ SOT523

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