Silicon NPN Bipolar Transistor

Features • High gain bandwidth product fT= 9.5 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Application VHF & UHF wide band amplifire

文件：43.58 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 10.5 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz

文件：65.58 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 10.5 GHz Typ • High gain, low noise figure PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：65.43 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ. • High gain, low noise figure PG = 16.5 dB Typ. , NF = 1.1 dB Typ. at f = 900 MHz Application VHF / UHF wide band amplifier

文件：254.82 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：65.95 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application\nVHF / UHF wide band amplifier • High gain bandwidth product\n• High gain, low noise figure\n  PG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz;

HITACHI

日立

Silicon NPN Epitaxial

HITACHI

日立

SOT-353 Dual Bipolar Junction Transistors

LISION

力神