Silicon NPN Triple Diffused

Features • High break down voltage V(BR)CEO = 300 V min. Application High voltage amplifier

文件：146.03 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Definition CRT Display Video Output Applications?????????

Transistors for TV Display Video Output Use

文件：121.44 Kbytes 页数：4 Pages

SANYO

三洋

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

文件：183.52 Kbytes 页数：3 Pages

SANYO

三洋

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

文件：69.12 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planer type For high-frequency amplification ■ Features ● Optimum for RF amplification, oscillation, mixing, and IF of FM/AM radios. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

文件：55.36 Kbytes 页数：3 Pages

PANASONIC

松下

Transistors (Selection Guide by Applications and Functions)

● High Speed Switch • VCO and High Frequency Type ● High Frequency Amplifiers and Others ● High Frequency Silicon Transistors for Transmitters

文件：251.19 Kbytes 页数：1 Pages

PANASONIC

松下

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 ■ Features ● High transition frequency fT. ● Small collector output capacitance Cob. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t

文件：35.71 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer type

Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1791 ■ Features ● Small collector output capacitance Cob. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

文件：35.55 Kbytes 页数：2 Pages

PANASONIC

松下

High-Definition CRT Display Video Output Driver Applications??????

High-Definition CRT Display Video Output Driver Applications Features • High fT (fT=2.2GHz typ) • Large current (IC=300mA) • Adoption of FBET process.

文件：79.68 Kbytes 页数：3 Pages

SANYO

三洋

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

文件：107.6 Kbytes 页数：4 Pages

ISC

无锡固电