Silicon NPN Power Transistors

文件：264.58 Kbytes 页数：4 Pages

SAVANTIC

SILICON POWER TRANSISTOR

文件：285.11 Kbytes 页数：8 Pages

RENESAS

瑞萨

SILICON POWER TRANSISTOR

文件：250.49 Kbytes 页数：8 Pages

RENESAS

瑞萨

SILICON POWER TRANSISTOR

文件：235.8 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Power Transistor

文件：127.7 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件：189.07 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistor

文件：127.49 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件：137.54 Kbytes 页数：4 Pages

SAVANTIC

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC4551 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-mold • High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, IC = 2 A) VCE(sat) ≤ 0.3 V (IC = 6 A, IB = 0.3 A)\n• Mold package that does not require an insulating board or insulation bushing;

Renesas

瑞萨

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC4552 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-mold • High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, IC = 3 A) VCE(sat) ≤ 0.3 V (IC = 8 A, IB = 0.4 A)\n• Mold package that does not require an insulating board or insulation bushing;

Renesas

瑞萨