NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation

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NEC

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SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insula

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RENESAS

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Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 0.3V(Max) @IC= 6A APPLICATIONS · DC/DC Converters · Converters · Power Amplifiers

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ISC

无锡固电

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC4551 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-mold • High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, IC = 2 A) VCE(sat) ≤ 0.3 V (IC = 6 A, IB = 0.3 A)\n• Mold package that does not require an insulating board or insulation bushing;

Renesas

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SILICON POWER TRANSISTOR

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RENESAS

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