Ratigns and Caracteristics of Fuji Power Transistor

Ratigns and Caracteristics of Fuji Power Transistor

文件：615.94 Kbytes 页数：13 Pages

FUJI

富士通

isc Silicon NPN Power Transistor

iscSilicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO = 800V(Min.) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power ampl

文件：251.19 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage-: V(BR)CEO = 800V(Min.) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

文件：129.75 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL PLANAR TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) • High speed switching time: tstg = 0.3 µs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1743

文件：176.91 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial

Application High frequency amplifier, mixer

文件：35.63 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1735

文件：155.49 Kbytes 页数：3 Pages

TOSHIBA

东芝

Power Switching Applications

Features ■ Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 500mA) ■ High Speed Switching Time: tstg = 0.4ìs(typ.) ■ Small Flat Package ■ PC = 1 to 2W (mounted on ceramic substrate) ■ Complementary to 2SA1735

文件：319.99 Kbytes 页数：3 Pages

KEXIN

科信电子

NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.) • Small flat package • PC= 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1736

文件：178.55 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Switching Applications

Features ● Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 1.5A) ● High Speed Switching Time: tstg = 0.5μs(typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SA1736

文件：426.83 Kbytes 页数：3 Pages

KEXIN

科信电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage APPLICATIONS ·Horizontal deflection output for high resolution display ·High speed switching regulator output applications

文件：285.75 Kbytes 页数：4 Pages

SAVANTIC