Power Switching Applications

Features ● Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 1.5A) ● High Speed Switching Time: tstg = 0.5μs(typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SA1736

文件：426.83 Kbytes 页数：3 Pages

KEXIN

科信电子

NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.) • Small flat package • PC= 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1736

文件：178.55 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件：171.26 Kbytes 页数：5 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope：Switching / Power amplifier\nPolarity：NPN\nComplementary Product：2SA1736\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 3 A \nCollector power dissipation (mounted on ceramic board (250mm**2, t0.8mm)) PC 1 W \nCollector-emitter voltage VCEO 50 V ;

Toshiba

东芝

Power Amplifier Applications Power Switching Applications

文件：171.26 Kbytes 页数：5 Pages

TOSHIBA

东芝

功率三极管

ST

意法半导体

NPN小信号三极管

CBI

创基电子