NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1735

文件：155.49 Kbytes 页数：3 Pages

TOSHIBA

东芝

Power Switching Applications

Features ■ Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 500mA) ■ High Speed Switching Time: tstg = 0.4ìs(typ.) ■ Small Flat Package ■ PC = 1 to 2W (mounted on ceramic substrate) ■ Complementary to 2SA1735

文件：319.99 Kbytes 页数：3 Pages

KEXIN

科信电子

Power Amplifier Applications Power Switching Applications

文件：150.14 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope：Switching / Power amplifier\nPolarity：NPN\nComplementary Product：2SA1735\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 1 A \nCollector power dissipation (mounted on ceramic board (250mm**2, t0.8mm)) PC 1 W \nCollector-emitter voltage VCEO 50 V ;

Toshiba

东芝

Power Amplifier Applications Power Switching Applications

文件：150.14 Kbytes 页数：4 Pages

TOSHIBA

东芝

功率三极管

ST

意法半导体