Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High hFEand low VCE(sat) APPLICATIONS • For high-speed switching • For use in drivers such as DC-DC converters and actuators.

文件：176.75 Kbytes 页数：4 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, IC= 3A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

文件：321.43 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, lc= 3A) • Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (lc= 8A, IB= 0.4A) APPLICATIONS • Designed for use as a driver in DC/DC converters and actuators.

文件：138.3 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High hFEand low VCE(sat) APPLICATIONS • For high-speed switching • For use in drivers such as DC-DC converters and actuators.

文件：262.9 Kbytes 页数：4 Pages

SAVANTIC

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES • High h

文件：126.03 Kbytes 页数：6 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES

文件：249.83 Kbytes 页数：8 Pages

RENESAS

瑞萨

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES • High hFE

文件：235.15 Kbytes 页数：8 Pages

RENESAS

瑞萨

2SC4554

SILICON POWER TRANSISTOR

文件：86.95 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES • High hFE and low

文件：111.96 Kbytes 页数：6 Pages

NEC

瑞萨

NPN Epitaxial Planar Silicon Transistor

Features Very small-sized package Low collector-to-emitter saturation voltage.

文件：47.35 Kbytes 页数：2 Pages

KEXIN

科信电子