NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 500 ns (typ.) • Complementary to 2SA1680

文件：166.3 Kbytes 页数：2 Pages

TOSHIBA

东芝

NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power switching applications • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.) • Small flat package • PC = 1~2 W (Mounted on a ceramic substrate) • Complementary to 2SA1681

文件：73.17 Kbytes 页数：1 Pages

TOSHIBA

东芝

Power Switching Applications

Features ● Low Collector Saturation Voltage: VCE(sat) = 0.5V(max)(IC = 1A) ● High Speed Switching Time: tstg = 500ns(typ.) ● Small Flat Package ● PC = 1.0 to 2.0W (mounted on a ceramic substrate) ● Complementary to 2SA1681

文件：359.73 Kbytes 页数：3 Pages

KEXIN

科信电子

Silicon NPN epitaxial planer type(For UHF amplification)

Silicon NPN epitaxial planer type For UHF amplification ■ Features ● Allowing the small current and low voltage operation. ● High transition frequency fT. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magaz

文件：37.83 Kbytes 页数：2 Pages

PANASONIC

松下

Very High-Definition CRT Display Video Output Applications???

Ultrahigh-Definition CRT Display Video Output Applications Features · High fT(fT=1.2GHz typ). · High breakdown voltage (VCBO=100V, VCEO=80V). · Large current (IC=500mA). · Small reverse transfer capacitance (Cre =3.8pF/ VCB=30V). · Adoption of FBET process. Applications

文件：84.14 Kbytes 页数：3 Pages

SANYO

三洋

TV camera Deflection, High-Voltage Driver Applications

TV Camera Deflection High-Voltage Driver Applications Features • High breakdown voltage(VCEO≥300V). • Small reverse transfer capacitance and excellent high frequency characteristic(Cre : 1.0pF typ). • Excellent DC current gain ratio(hFE ratio : 0.95 typ). • Adoption of FBET process.

文件：73.68 Kbytes 页数：3 Pages

SANYO

三洋

NPN Triple Diffused Planar Silicon Transistor

Features ● High breakdown voltage. ● Small reverse transfer capacitance and excellent high frequency characteristic(Cre : 1.0pF typ). ● Excellent DC current gain ratio(hFE ratio : 0.95 typ).

文件：38.28 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN Epitaxial Planar Silicon Transistor

Features ● Adoption of FBET process. ● High DC current gain. ● Low collector-to-emitter saturation voltage. ● High VEBO. ● Small Cob.

文件：45.44 Kbytes 页数：1 Pages

KEXIN

科信电子

Low-Frequency General-Purpose Amp Applications??????????

Low-Frequency General-Purpose Amplifier Applications Features • Very small-sized package permitting the 2SC4413-applied sets to be made small and slim. • Adoption of FBET process. • High DC current gain. • Low collector-to-emitter saturation voltage. • High VEBO. • Small Cob.

文件：82.37 Kbytes 页数：3 Pages

SANYO

三洋

High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications?

High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications

文件：115.54 Kbytes 页数：4 Pages

SANYO

三洋