isc Silicon NPN Power Transistor

文件：282.82 Kbytes 页数：2 Pages

ISC

无锡固电

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件：459.54 Kbytes 页数：7 Pages

RENESAS

瑞萨

isc Silicon NPN Power Transistor

文件：286.46 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件：123.25 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：166.82 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件：166.82 Kbytes 页数：3 Pages

JMNIC

锦美电子

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC4331 and 2SC4331-Z are mold power transistors developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC convert • Available for high-current control in small dimension\n• Z type is a lead-processed product and is deal for mounting a hybrid IC.\n• Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A)\n• Fast switching speed: tf ≤ 0.4 μs MAX. (IC = 3.0 A)\n• High DC current gain and excellent line;

Renesas

瑞萨

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC4331 and 2SC4331-Z are mold power transistors developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC convert • Available for high-current control in small dimension\n• Z type is a lead-processed product and is deal for mounting a hybrid IC.\n• Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A)\n• Fast switching speed: tf ≤ 0.4 μs MAX. (IC = 3.0 A)\n• High DC current gain and excellent line;

Renesas

瑞萨

功率三极管

ST

意法半导体