NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor driv

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NEC

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SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors developed for high-speed switching and feature a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, moto

文件：458.93 Kbytes 页数：7 Pages

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isc Silicon NPN Power Transistor

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Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC4332 and 2SC4332-Z are mold power transistors developed for high-speed switching and feature a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converte • Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A / IB = 0.15 A)\n• Fast switching speed: tf ≤ 0.3 μs MAX. (IC = 3.0 A)\n• High DC current gain;

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NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor driv

文件：34.28 Kbytes 页数：4 Pages

NEC

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NPN Silicon Epitaxia

Features ● Low collector saturation voltage. ● Fast switching speed. ● High DC current gain.)

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KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件：459.54 Kbytes 页数：7 Pages

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isc Silicon NPN Power Transistor

文件：286.46 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC4332 and 2SC4332-Z are mold power transistors developed for high-speed switching and feature a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converte • Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A / IB = 0.15 A)\n• Fast switching speed: tf ≤ 0.3 μs MAX. (IC = 3.0 A)\n• High DC current gain;

Renesas

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