Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：294.58 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：275.52 Kbytes 页数：2 Pages

ISC

无锡固电

High-hFE, Low-Frequency General-Purpose Amp Applications?????????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low frequency

文件：84.53 Kbytes 页数：3 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications

25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications •Low-frequency general-purpose amplifiers, drivers. Features • Large current capacity (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=1000 to 2000). • Low collector-to-emi

文件：50.69 Kbytes 页数：4 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications

25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers. Features • Large current capacity (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=1000 to 2000). • Low collector-to-emitter saturation v

文件：49.55 Kbytes 页数：4 Pages

SANYO

三洋

High-hFE, Low-Frequency General-Purpose Amp Applications?????????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low f

文件：84.49 Kbytes 页数：3 Pages

SANYO

三洋

NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

FEATURES • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. • Dual chips in one package can achieve high performance for differential amplifiers and current mode logic (CML) circuits.

文件：34.73 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES · The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. · Dual chips in one package can

文件：164.68 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

High Frequency Amplifier Applications High power gain: Gpe= 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage.

文件：338.53 Kbytes 页数：6 Pages

TOSHIBA

东芝

NPN Plastic-Encapsulated Transistor

FEATURES High Frequency Amplifier Applications

文件：83.53 Kbytes 页数：1 Pages

SECOS

喜可士