丝印：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • High collector-emitter voltage • Low collector saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High voltage switching.

文件：301.3 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Silicon Epitaxial Transistor

■ Features ● High voltage ● High speed ● Complementary to 2SA1413-Z

文件：40.37 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

文件：270.65 Kbytes 页数：6 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

文件：895.35 Kbytes 页数：7 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

文件：895.35 Kbytes 页数：7 Pages

RENESAS

瑞萨

NPN Transistors

文件：1.36833 Mbytes 页数：3 Pages

KEXIN

科信电子

NPN Transistors

文件：1.36833 Mbytes 页数：3 Pages

KEXIN

科信电子

NPN Transistors

文件：1.36833 Mbytes 页数：3 Pages

KEXIN

科信电子

NPN Transistors

文件：1.36833 Mbytes 页数：3 Pages

KEXIN

科信电子

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage VCEO = 600 V\n• High Speed tf < 0.5 μs\n• Complement to 2SA1413-Z;

Renesas

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