NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

DESCRIPTION The 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO = 400 V • High Speed tf

文件：235.99 Kbytes 页数：4 Pages

NEC

瑞萨

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage VCEO = 400 V\n• High Speed tf < 0.7 μs\n• Complement to 2SA1412-Z;

Renesas

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丝印：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers • High-speed inverters • Conver

文件：248.39 Kbytes 页数：2 Pages

ISC

无锡固电

NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

DESCRIPTION The 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO = 400 V • High Speed tf

文件：235.99 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO = 400 V • High Speed tf

文件：753.18 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

文件：753.18 Kbytes 页数：6 Pages

RENESAS

瑞萨

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage VCEO = 400 V\n• High Speed tf < 0.7 μs\n• Complement to 2SA1412-Z;

Renesas

瑞萨