High-Definition CRT Display, Video Output Applications???

High-Definition CRT Display, Video Output Applications Use • Color TV chroma output and high breakdown voltage driver. Features • High breakdown votage : VCEO≥300V. • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). • Adoption of

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SANYO

三洋

HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS

HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS FEATURES * High breakdown voltage: VCBO, VCEO ≧ 300V * Small reverse transfer capacitance and excellent high frequency characteristicF

文件：130.16 Kbytes 页数：3 Pages

UTC

友顺

Silicon NPN Epitaxial

Application Low frequency amplifier

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HITACHIHitachi Semiconductor

日立日立公司

丝印：C3474；Package：SC-71；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.4A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：294.72 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.4A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：275.66 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.4A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：294.72 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.4A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：275.66 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 2A • High Switching Speed APPLICATIONS • High speed switching applications. • High speed DC-DC converter applications.

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ISC

无锡固电

NPN SILICON TRANSISTORS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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