丝印：RH；Package：SOT-89；NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz

文件：575.86 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN Transistors

■ Features ● Low noise and high gain ● High power gain ● Large Ptot

文件：665.14 Kbytes 页数：4 Pages

YFWDIODE

佑风微

NPN Transistors

■ Features ● Low noise and high gain ● High power gain ● Large Ptot

文件：665.14 Kbytes 页数：4 Pages

YFWDIODE

佑风微

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

文件：309.96 Kbytes 页数：2 Pages

LRC

乐山无线电