NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 ×

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NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

文件：216.06 Kbytes 页数：6 Pages

CEL

Package：TO-243AA；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 6.5GHZ SOT89

CEL

Package：TO-243AA；包装：带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 6.5GHZ SOT89

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