2SC3357D

Marking：RE；Package：SOT-89；NPN SILICON RF TRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V，IC=20mA，f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V，IC=7mA，f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V，IC=20mA，f=1GHz

2SC3357E

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V，IC=20mA，f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V，IC=7mA，f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V，IC=20mA，f=1GHz

2SC3357-E

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot

2SC3357-E-HF

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

2SC3357-F

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot

2SC3357-F-HF

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

2SC3357-HF

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

2SC3357-H-HF

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

L2SC3357

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR