For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package

文件：228.04 Kbytes 页数：5 Pages

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东芝

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package

文件：228.04 Kbytes 页数：5 Pages

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东芝

Silicon NPN transistor in a SOT-23 Plastic Package

文件：895.19 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

文件：512 Kbytes 页数：5 Pages

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东芝

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package

文件：177.97 Kbytes 页数：4 Pages

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东芝