NPN General Purpose Amplifier

Features · Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) · Power switching application · Complementary to 2SA1298 · Low frequency power amplifier application · Epoxy meets UL 94 V-0 flammability rating · Moisure Sensitivity L

文件：331.54 Kbytes 页数：3 Pages

MCC

Low Frequency Power Amplifier Applications Power Switching Applications

Low Frequency Power Amplifier Applications Power Switching Applications High DC current gain: hFE (1) = 100~320 Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) Complementary to 2SA1298

文件：184.22 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN General Purpose Amplifier

Features · Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) · Power switching application · Complementary to 2SA1298 · Low frequency power amplifier application · Epoxy meets UL 94 V-0 flammability rating · Moisure Sensitivity L

文件：331.54 Kbytes 页数：3 Pages

MCC

NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296

文件：146.44 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWICHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297

文件：151.24 Kbytes 页数：2 Pages

TOSHIBA

东芝

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

文件：134.91 Kbytes 页数：1 Pages

TOSHIBA

东芝

SILICON NPN EPITAXIAL PLANAR TYPE

VHF~UHF Band Low Noise Amplifier Applications • NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz) • NF = 2dB, |S21e|2 = 9.5dB (f = 1000 MHz)

文件：246.46 Kbytes 页数：4 Pages

TOSHIBA

东芝

High Voltage Amp.Triple Diffused Planar NPN Silicon Transistors

High Voltage Amp.

文件：105.63 Kbytes 页数：3 Pages

ROHM

罗姆

Chroma Amplifier Transistor

Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

文件：61.66 Kbytes 页数：1 Pages

ROHM

罗姆

Chroma Amplifier Transistor (300V, 0.1A)

Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

文件：78.33 Kbytes 页数：4 Pages

ROHM

罗姆