Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High speed switching • Good linearity of hFE • High VCBO APPLICATIONS • For high speed switching applications

文件：135.81 Kbytes 页数：3 Pages

SAVANTIC

NPN SILICON EPITAXIAL TRANSISTOR FOR 230-MHz WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

FEATURES • High gain and high power output at 230 MHz Pout = 140 W @ VCC = 28 V, Pin = 10 W, class AB • Push-pull structure allows easy design of wideband amplifier • Internal emitter balance resistor • Withstand up to VSWR = ∞ • Internal impedance matching circuit • High reliability due to

文件：176.39 Kbytes 页数：10 Pages

RENESAS

瑞萨

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR 230-MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

文件：108.23 Kbytes 页数：8 Pages

NEC

瑞萨

For Switching Regulators

For General-Purpose Drivers Features • High DC current gain. • Large current capacity and wide ASO. • Contains 60±10V Zener diode between collector and base. • Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. • 15mJ rever

文件：75.49 Kbytes 页数：3 Pages

SANYO

三洋

Driver Applications

Driver Applications Features • High DC current gain. • Large current capacity and wide ASO. • On-chip Zener diode of 60±10V between collector and base. • Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process. • High inductive load han

文件：82.84 Kbytes 页数：3 Pages

SANYO

三洋

Driver Applications?

Driver Applications Features • High DC current gain. • Large current capacity and wide ASO. • On-chip Zener diode of 60±10V between collector and base. • Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. • High inductive l

文件：76.43 Kbytes 页数：3 Pages

SANYO

三洋

NPN EPITAXIALTYPE (AUDIO FREQUENC AMPLIFIER, SWITCHING APPLICATIONS)

Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package

文件：156.6 Kbytes 页数：3 Pages

TOSHIBA

东芝

Audio Frequency Amplifier Applications Switching Applications

Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package

文件：195.35 Kbytes 页数：4 Pages

TOSHIBA

东芝

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package

文件：218.6 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial

Features ● High hFE: hFE = 600~3600. ● High voltage: VCEO = 50 V. ● High collector current: IC = 150 mA (max). ● Small package.

文件：37.23 Kbytes 页数：1 Pages

KEXIN

科信电子