SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR 230-MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

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NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR 230-MHz WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

FEATURES • High gain and high power output at 230 MHz Pout = 140 W @ VCC = 28 V, Pin = 10 W, class AB • Push-pull structure allows easy design of wideband amplifier • Internal emitter balance resistor • Withstand up to VSWR = ∞ • Internal impedance matching circuit • High reliability due to

文件：176.39 Kbytes 页数：10 Pages

RENESAS

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SILICON POWER TRANSISTOR

Renesas

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TO-3P

FUJI

富士通

上传：深圳市凌旭科技有限公司

SOT-23

TOSHIBA

东芝

上传：瀚佳科技(深圳)有限公司