NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package

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Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package

文件：277.76 Kbytes 页数：5 Pages

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Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package

文件：277.76 Kbytes 页数：5 Pages

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Silicon NPN Epitaxial

Features High voltageVCEO=120V High hFE.hFE=200 to 700 Low noise. Small package.

文件：36.28 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications

文件：663.23 Kbytes 页数：5 Pages

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Transistor for low frequency small-signal amplification

Feature：Low noise\nPolarity：NPN\nComplementary Product：2SA1312\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 0.1 A \nCollector-emitter voltage VCEO 120 V ;

Toshiba

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Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package

文件：277.76 Kbytes 页数：5 Pages

TOSHIBA

东芝

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package

文件：277.76 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications

文件：663.23 Kbytes 页数：5 Pages

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Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 120V 0.1A TO236

Toshiba Semiconductor and Storage