Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High voltage: VCEO=300V(min) APPLICATIONS ·For color TV chroma output applications

文件：81.82 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High voltage: VCEO=300V(min) APPLICATIONS ·For color TV chroma output applications

文件：203.78 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SA1276 • Good linearity of hFE APPLICATIONS • General purpose applications • Cordless telephone tx final amplifier application for 1.7MHz system

文件：95.04 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) • Good Linearity of hFE • Complement to Type 2SA1276 APPLICATIONS • Designed for general purpose applications.

文件：126.18 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SA1276 • Good linearity of hFE APPLICATIONS • General purpose applications • Cordless telephone tx final amplifier application for 1.7MHz system

文件：64.459 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakddown Voltage : V(BR)CEO= 60V(Min) • Large Current Capability • High Collector PowerDissipation APPLICATIONS • Designedfor B/W TV horizontal deflection output applications

文件：124.42 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Wide area of safe operation APPLICATIONS • Switching regulators • General purpose power amplifiers • TV horizontal output applications

文件：89.63 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Wide area of safe operation APPLICATIONS • Switching regulators • General purpose power amplifiers • TV horizontal output applications

文件：56.62 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：294.13 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：275.07 Kbytes 页数：2 Pages

ISC

无锡固电