Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：294.13 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：275.07 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High voltage,high speed • Low saturation voltage APPLICATIONS • For high voltage ,high speed and high power switching applications

文件：88.64 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High voltage,high speed • Low saturation voltage APPLICATIONS • For high voltage ,high speed and high power switching applications

文件：57.08 Kbytes 页数：3 Pages

ISC

无锡固电

SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION.

FEATURES: -Excellent Switching Times : tr-1.0μs (Max.), tf-1.0μs (Max.) at Ic=4A -High Collector Breakdown Voltage: VCEO-400V

文件：214.12 Kbytes 页数：3 Pages

TOSHIBA

东芝

HIGH CURRENT SWITCHING APPLICATIONS.

FEATURES: -Low Collector Saturation Voltage : VCE (sat) 0.4V (Max.) (at Ic-3A) -High Speed Switching Time: tstg=1.0μs (Typ.) -Complementary to 25A1279

文件：244.06 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC3240 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. APPLICATION Output stage of transmitter in HF band SSB mobile radio sets

文件：136.24 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. APPLICATION Output stage of transmitter in HF band SSB mobile radio sets

文件：138.98 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

DESCRIPTION 2SC3243 is a silicon NPN epitaxial type transistor designed for relay drive or power supply application. Complementary with 2SA1238. APPLICATION Relay drive, power supply for audio equipment, VCR.

文件：144.4 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

T O-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Voltage ● High Collector Current ● Low VCE(sat) ● High Collector Dissipation

文件：2.1905 Mbytes 页数：3 Pages

JIANGSU

长电科技