isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application.

文件：238.96 Kbytes 页数：2 Pages

ISC

无锡固电

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

2SC2652 is 2 ~ 30 Mhz SSB Linear Power Amplifier Applications. (50V Supply Voltage Use)

文件：161.1 Kbytes 页数：2 Pages

TOSHIBA

东芝

Audio Frequency Power Amplifier, Medium Speed Switching

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：274.27 Kbytes 页数：4 Pages

NEC

瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed switching applications. ·Ideal for use in a lamp driver.

文件：257.29 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Large current capacitance in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A) • Ideal for use in a lamp driver • Complementary transi

文件：250.95 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA1129 ·Low collector saturation votage APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

文件：103.08 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon NPN Pow Transistor

DESCRIPTION • Silicon NPN epitaxial type • Low saturation voltage • Complementary to 2SA1020 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications • Power switching applications

文件：255.22 Kbytes 页数：2 Pages

ISC

无锡固电

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) ● High Speed Switching Time: tstg=1μs(Typ.) ● Complementary to 2SA1020

文件：3.69215 Mbytes 页数：5 Pages

JIANGSU

长电科技

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

文件：282.69 Kbytes 页数：2 Pages

WEITRON

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020.

文件：179.48 Kbytes 页数：4 Pages

TOSHIBA

东芝