2SC1623T

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812T. Applications Audiofrequencygeneralamplifierapplication.

2SC1623

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforaudiofrequencyamplifierapplications.

2SC1623

NPNEpitaxialPlanarTransistor

DESCRIPTION The2SC1623isdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication.

2SC1623

NPNSiliconTransistor

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

2SC1623

Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SC1623

SiliconEpitaxialPlanarTransistor

FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier.

2SC1623

NPNSiliconEpitaxialTransistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

2SC1623

NPNGeneralPurposeTransistors

Lead(Pb)-Free

2SC1623

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •HighDCCurrentGain:hFE=200TYP. (VCE=6.0V,IC=1.0mA) •HighVoltage:VCEO=50V

2SC1623

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃