NPN Silicon Epitaxial Transistor

Features ● High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) ● High voltage VCEO : 160V

文件：169.69 Kbytes 页数：3 Pages

KEXIN

科信电子

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

文件：41.27 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for TV PIF, FM tuner RF amplifier, mixer, and oscillator applications.

文件：215.64 Kbytes 页数：1 Pages

DCCOM

道全

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1674 is designed for use FM RF amplifier and local oscillator of FM tuner.

文件：298.21 Kbytes 页数：4 Pages

NEC

瑞萨

NPN Plastic Encapsulated Transistor

FEATURES • General Purpose Switching and Amplification

文件：83.88 Kbytes 页数：1 Pages

SECOS

喜可士

TO-92 Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES ● High current gain bandwidth product fT=600MHz(Typ.), ● High power gain GPE=22dB at f=100MHz

文件：243.35 Kbytes 页数：2 Pages

TGS

丝印：2SC1674；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching and Amplification.

文件：1.37744 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0. 25 W (Tamb=25℃) Collector current ICM: 0.02 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：147.07 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 20V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 0.3V(Max) @IC= 10mA APPLICATIONS · The 2SC1674 is designed for use in FM RF amplifier and local oscillator of FM tuner

文件：314.96 Kbytes 页数：3 Pages

ISC

无锡固电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● General Purpose Switching and Amplification.

文件：405.27 Kbytes 页数：3 Pages

JIANGSU

长电科技