Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features Low VCE(sat),complementary pair with 2SA683. Applications Audio frequency power amplifier and driver.

文件：914.4 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：62.89 Kbytes 页数：1 Pages

TEL

NPN Silicon General Purpose Transistor

FEATURE • Low collector to emitter saturation voltage VCE(sat). • Complementary pair with 2SA683 and 2SA684.

文件：172.88 Kbytes 页数：3 Pages

SECOS

喜可士

丝印：C1383；Package：TO-92L；TO-92L Plastic-Encapsulate Transistors

FEATURES Low Collector to Emitter Saturation Voltage VCE(sat). Complementary Pair with 2SA0683 and 2SA0684.

文件：3.01953 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：C1384；Package：TO-92L；TO-92L Plastic-Encapsulate Transistors

FEATURES Low Collector to Emitter Saturation Voltage VCE(sat). Complementary Pair with 2SA0683 and 2SA0684.

文件：3.01953 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TO-92L Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES ● Low collector to emitter saturation voltage VCE(sat). ● Complementary pair with 2SA0683 and 2SA0684.

文件：200.66 Kbytes 页数：3 Pages

TGS

Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

* Low collector-emitter saturation voltage VCE(sat) * Complementary pair with 2SA0683, 2SA0684 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684

文件：47.49 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN epitaxial planar type

 Features  Low collector-emitter saturation voltage VCE(sat)  Complementary pair with 2SA0684

文件：637.25 Kbytes 页数：5 Pages

PANASONIC

松下

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector to Emitter Saturation Voltage VCE(sat). ● Complementary Pair with 2SA0683 and 2SA0684.

文件：4.84276 Mbytes 页数：4 Pages

JIANGSU

长电科技

NPN Silicon General Purpose Transistor

FEATURE Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：146.01 Kbytes 页数：3 Pages

SECOS

喜可士