Silicon PNP Epitaxial

Application Medium speed and power switching complementary pair with 2SD970(K)

文件：37.12 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Low Saturation Voltage

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= -4A • Low Saturation Voltage • Complement to Type 2SD970 APPLICATIONS • Designed for medium speed and power switching applications

文件：102.2 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Epitaxial

文件：151.15 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

Application Medium speed and power switching complementary pair with 2SD970(K)

文件：37.12 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司