SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = −

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PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0

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NEC

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isc Silicon PNP Power Transistor

DESCRIPTION • High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is idea

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Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0 V, IC = −0.5 A)\n• Z type available for surface mounting supported prodcuts;

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PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0

文件：138.29 Kbytes 页数：6 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = −

文件：261.37 Kbytes 页数：8 Pages

RENESAS

瑞萨

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = −

文件：261.37 Kbytes 页数：8 Pages

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瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION • High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transi

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ISC

无锡固电

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0

文件：138.29 Kbytes 页数：6 Pages

NEC

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SILICON POWER TRANSISTOR

文件：262.029 Kbytes 页数：8 Pages

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