SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB166040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use

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SILAN

士兰微

LOW IR SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB166100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C opera

文件：20.7 Kbytes 页数：1 Pages

SILAN

士兰微

PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications

PNP Epitaxial Planar Silicon Darlington Transistor Features • High DC current gain. • Large current capacity and wide ASO. • Low saturation voltage. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

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SANYO

三洋

TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE (sat)= −1.7 V (max) (IC= −3 A, IB= −0.3 A)

文件：123.78 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

Silicon PNP Triple Diffused Type

■ Features ● Low saturation voltage ● Audio Frequency Power Amplifier Applications

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KEXIN

科信电子

For Power amplification (-100V, -8A)

For Power amplification (−100V, −8A) Features 1) High hFE by darlington connection. 2) Built-in resistors between base and emitter. 3) Damper diode is incorporated. Applications Relay drive Motor drive

文件：53.81 Kbytes 页数：2 Pages

ROHM

罗姆

For Power amplification (100V, 8A)

Power Transistor (100V, 8A) Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1668.

文件：53.54 Kbytes 页数：1 Pages

ROHM

罗姆

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = −

文件：261.37 Kbytes 页数：8 Pages

RENESAS

瑞萨