2SB1424

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics. Applications Generalpurposeamplifier.

2SB1424

Plastic-Encapsulate Transistors

FEATURES •LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). •ExcellentDCcurrentgaincharacterisitics. •Complementarythe2SD2150.

2SB1424

TRANSISTOR (PNP)

FEATURES Powerdissipation PCM:600mW(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SB1424

PNP Transistors

■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150

2SB1424

Marking：AEQ；Package：SOT-89；Low VCE(sat) Transistor(-20V,-3A)

FEATURES LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ExcellentDCcurrentgaincharacterisitics. Complementarythe2SD2150. APPLICATIONS Thisdeviceisdesignedasageneralpurposeamplifier andswitching.

2SB1424

Low Vce(sat) Transistor (-20V, -3A)

Features 1)LowVCE(sat).VCE(sat)=-0.2V(Typ.)(IC/IB=-2A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S.

2SB1424

Epitaxial Planar PNP Transistors

EpitaxialPlanarPNPTransistors P/bLead(Pb)-Free

2SB1424

Low VCE(sat) Transistor (−20V, −3A)

2SB1424G-X-AB3-R

LOW VCE(SAT) TRANSISTOR

LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A)

2SB1424L-X-AB3-R

LOW VCE(SAT) TRANSISTOR

LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A)