2SB1260L-R-TN3-K技术资料参数贸易商友顺-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SB1260L-R-TN3-K	文件：57.69 Kbytes Page：4 Pages	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) 文件：57.69 Kbytes 页数：4 Pages	UTC 友顺	UTC
2SB1260L-R-TN3-R	文件：57.69 Kbytes Page：4 Pages	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) 文件：57.69 Kbytes 页数：4 Pages	UTC 友顺	UTC
2SB1260L-R-TN3-B	文件：57.69 Kbytes Page：4 Pages	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) 文件：57.69 Kbytes 页数：4 Pages	UTC 友顺	UTC
2SB1261-AZ-E1	文件：0 bytes Page：0 Pages	TO251	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
2SB1261-Z-E1-AZ	文件：0 bytes Page：0 Pages	TO252	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS

更多2SB1260L-R-TN3-K供应商更新时间2025-12-22 11:02:00