2SB1260-R

PNP Plastic-Encapsulate Transistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO

2SB1260-R

PNP Transistors

2SB1260-R

PNP Plastic-Encapsulate Transistors

2SB1260-R

Marking：BER*；Package：SOT-89；Plastic-encapsulate PNP Transistors

2SB1260-R-AB3-B

POWER TRANSISTOR

POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT)

2SB1260-R-AB3-K

POWER TRANSISTOR

POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT)

2SB1260-R-AB3-R

POWER TRANSISTOR

POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT)

2SB1260-R-TN3-B

POWER TRANSISTOR

POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT)

2SB1260-R-TN3-K

POWER TRANSISTOR

POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT)

2SB1260-R-TN3-R

POWER TRANSISTOR

POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT)