2SB1132-R

Marking：BAR；Package：SOT-89；PNP Plastic-Encapsulate Transistors

PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Powerdissipation:PCM=0.5W(Tamb=25
) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO=-40V •Operatingandst

2SB1132-R

PNP Plastic-Encapsulate Transistors

2SB1132-R

Marking：BAR*；Package：SOT-89；PNP Transistors

2SB1132-R-AB3-R

MEDIUM POWER TRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

2SB1132-R-AB3-T

MEDIUM POWER TRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

2SB1132-R-TN3-R

MEDIUM POWER TRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

2SB1132-R-TN3-T

MEDIUM POWER TRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

2SB1132-R-TP

Package：TO-243AA；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 32V 1A SOT89