Bipolar Transistor -50V, -1A, Low VCE(sat) PNP Single PCP

Bipolar Transistor –50V, –1A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET process • Ultrasmall size making it easy to provide high-density hybrid IC’s Applicaitons • Voltage regulators relay drivers, lamp drivers, electrical equipment

文件：81.28 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

High-Current Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied

文件：114.81 Kbytes 页数：4 Pages

SANYO

三洋

High-Current Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied

文件：105 Kbytes 页数：5 Pages

SANYO

三洋

High-Current Switching Applications

■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623

文件：58.14 Kbytes 页数：2 Pages

KEXIN

科信电子

PNP-Silicon General use Transistors

PNP-Silicon General use Transistors 1W 、 1.5A、 25V Applications： Can be used for switching and amplifying in various electrical and electronic circuit.

文件：730.87 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

PNP Transistor

■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623

文件：650.66 Kbytes 页数：4 Pages

YFWDIODE

佑风微

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

文件：368.26 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

文件：368.26 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High-Current Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied

文件：105 Kbytes 页数：5 Pages

SANYO

三洋

丝印：BFR*；Package：SOT-89；PNP Transistor

■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623

文件：650.66 Kbytes 页数：4 Pages

YFWDIODE

佑风微