丝印：A950；TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120

文件：136.75 Kbytes 页数：2 Pages

TOSHIBA

东芝

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for low-frequency power amplifier applications.

文件：215.31 Kbytes 页数：1 Pages

DCCOM

道全

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • 1W Output Applications • Complementary to 2SC2120

文件：485.6 Kbytes 页数：4 Pages

JIANGSU

长电科技

TO-92 Plastic-Encapsulate Transistors (PNP)

FEATURES 1W Output Applications Complementary to 2SC2120

文件：259.149 Kbytes 页数：2 Pages

TGS

TRANSISTOR (PNP)

FEATURE Power dissipation PCM : 0.6 W (Tamb=25℃) Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃

文件：135.77 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES • 1W output applications • complementary to 2SC2120

文件：290.61 Kbytes 页数：2 Pages

KOOCHIN

灏展电子

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High hFE,1W output applications, Complementary pair with 2SC2120. Applications Audio frequency power amplifier.

文件：853.41 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

PNP Plastic Encapsulated Transistor

* 1W output applications * Complementary to 2SC2120

文件：344.59 Kbytes 页数：2 Pages

SECOS

喜可士

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • 1W output applications • complementary to 2SC2120

文件：246.36 Kbytes 页数：2 Pages

HOTTECH

合科泰

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.6 W (Tamb=25℃) Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃

文件：66.83 Kbytes 页数：1 Pages

TEL