三极管 / 通用三极管

First

福斯特

General Purpose Transistors

FEATURE ● High Voltage: VCEO = -50 V. ● Epitaxial planar type. ● NPN complement: 2SC1623 ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified

文件：826.89 Kbytes 页数：5 Pages

YEASHIN

亚昕科技

Silicon Epitaxial Planar Transistor

FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier.

文件：253.17 Kbytes 页数：4 Pages

BILIN

银河微电

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：69.25 Kbytes 页数：1 Pages

TEL

东电电子

AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE= 200 TYP. (VCE= −6.0 V, IC= −1.0 mA) ) • High Voltage: VCEO= −50 V

文件：241.88 Kbytes 页数：4 Pages

NEC

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