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2SA2039

High Current Switching Applications

High Current Switching Applications Features • Adoption of FBET, MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers,

文件:40.18 Kbytes 页数:5 Pages

SANYO

三洋

2SA2039

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

文件:424.78 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

2SA2039

isc Silicon PNP Power Transistor

DESCRIPTION ·Large current capacitance ·High-speed switching ·100 avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC5706 ·Minimum Lot-to-Lot variations for robust device performance a

文件:370.12 Kbytes 页数:3 Pages

ISC

无锡固电

2SA2039-E

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

文件:424.78 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

2SA2039-TL-E

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

文件:424.78 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

2SA2030

丝印:BW;Package:VMT3;Low frequency transistor

文件:145.28 Kbytes 页数:3 Pages

ROHM

罗姆

2SA2030

丝印:BW;Package:VMT3;Low frequency transistor(-12V, -500mA)

文件:1.70288 Mbytes 页数:12 Pages

ROHM

罗姆

2SA2030_15

Low frequency transistor(-12V, -500mA)

文件:1.70288 Mbytes 页数:12 Pages

ROHM

罗姆

2SA2031

Silicon PNP Power Transistors

文件:247.35 Kbytes 页数:4 Pages

JMNIC

锦美电子

2SA2031_15

Silicon PNP Power Transistors

文件:247.35 Kbytes 页数:4 Pages

JMNIC

锦美电子

晶体管资料

  • 型号:

    2SA203

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Ge-PNP

  • 性质:

    调幅 (AM)_中频放大 (ZF)

  • 封装形式:

    直插封装

  • 极限工作电压:

    15V

  • 最大电流允许值:

    0.015A

  • 最大工作频率:

    5MHZ

  • 引脚数:

    3

  • 可代换的型号:

    AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA101,2SA102,2SA103,2SA104,3AG5A,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    C-47

  • vtest:

    15

  • htest:

    5000000

  • atest:

    0.015

  • wtest:

    0

技术参数

  • 封装:

    VMT3

  • 包装数量:

    8000

  • 最小独立包装数量:

    8000

  • 包装形态:

    Taping

  • RoHS:

    Yes

  • Package Code:

    SOT-723

  • JEITA Package:

    SC-105AA

  • Number of terminal:

    3

  • Polarity:

    PNP

  • Collector Power dissipation PC[W]:

    0.15

  • Collector-Emitter voltage VCEO1[V]:

    -12

  • Collector current Io(Ic) [A]:

    -0.5

  • hFE:

    270 to 680

  • hFE (Min.):

    270

  • hFE (Max.):

    680

  • Mounting Style:

    Surface mount

  • Storage Temperature (Min.)[°C]:

    -55

  • Storage Temperature (Max.)[°C]:

    150

  • Package Size [mm]:

    1.2x1.2 (t=0.5)

供应商型号品牌批号封装库存备注价格
SANYO
24+
25
询价
NEC
24+
CAN3
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
24+
CAN3
6540
原装现货/欢迎来电咨询
询价
SONYO
TO252
06+PB
2255
全新原装进口自己库存优势
询价
ROHM
23+
VMT3
3260
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
SAN
24+
原厂封装
3500
原装现货假一罚十
询价
ROHM
23+
SOT-723
30000
原装正品,假一罚十
询价
TOS
16+
TO-3P
10000
全新原装现货
询价
ROHM
2016+
SOT-723
4000
只做原装,假一罚十,公司可开17%增值税发票!
询价
SANYO
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
询价
更多2SA203供应商 更新时间2026-1-20 16:30:00