Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

文件：424.78 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

High Current Switching Applications

High Current Switching Applications Features • Adoption of FBET, MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers,

文件：40.18 Kbytes 页数：5 Pages

SANYO

三洋

isc Silicon PNP Power Transistor

DESCRIPTION ·Large current capacitance ·High-speed switching ·100 avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC5706 ·Minimum Lot-to-Lot variations for robust device performance a

文件：370.12 Kbytes 页数：3 Pages

ISC

无锡固电

High-Current Switching Applications

文件：507.53 Kbytes 页数：10 Pages

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三洋

High Current Switching Applications

文件：67.01 Kbytes 页数：5 Pages

SANYO

三洋

双极晶体管，-50V，-5A，低 VCE (sat)，(PNP)NPN 单 TP/TP-FA

2SA2039 is a Bipolar Transistor, -50V, -5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Current Switching Applications. • Adoption of FBET and MBIT processes\n• Large current capacitance\n• Low collector-to-emitter saturation voltage\n• High-speed switching\n• High allowable power dissipation;

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

文件：424.78 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

文件：424.78 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

High Current Switching Applications

文件：67.01 Kbytes 页数：5 Pages

SANYO

三洋

High-Current Switching Applications

文件：507.53 Kbytes 页数：10 Pages

SANYO

三洋