PNP Silicon General Purpose Transistor

FEATURES High Collector Current Low VCE(sat) - VCE(sat)≤-250mV at IC = -200mA/IB=-10mA

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Low frequency transistor

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PNP Silicon General Purpose Transistor

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PNP, SOT-416, -12V -0.5A, Low VCE(sat) Transistor

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. • High current.\n• Collector-Emitter saturation voltage is low.\n VCE(sat)≦250mA at IC=-200mA/IB=-10mA;

ROHM

罗姆

PNP, SOT-416, -12V -0.5A, 低VCE(sat) 晶体管

2SA2018E3HZG是一款车规级高可靠性双极晶体管。 • A collector current is large.\n• Collector-Emitter saturation voltage is low.\n VCE(sat)≤250mA\n at IC=-200mA/IB=-10mA;

ROHM

罗姆

Package：SC-75，SOT-416；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PNP, SOT-416, -12V -500MA, LOW F

Rohm Semiconductor

Package：SC-75，SOT-416；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 12V 0.5A EMT3

Rohm Semiconductor