DC / DC Converter Applications

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applicat

文件：37.51 Kbytes 页数：5 Pages

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：295.87 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：276.82 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：295.87 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：276.82 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON PNP EPITAXIAL PLANER TYPE

Silicon PNP epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

文件：362.41 Kbytes 页数：1 Pages

PANASONIC

松下

丝印：T106；Package：UMT3；MEDIUM POWER TRANSISTOR (-30V,-0.5A)

Features 1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5729 Applications Small signal low frequency amplif

文件：43.01 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：UL；Package：TSMT3；Medium power transistor (-30V, -1.0A)

Medium power transistor (−30V, −1.0A) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730

文件：44.33 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：T146；Package：SMT3；Medium power transistor (-30V, -1.0A)

Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730K Applications Small signal low freque

文件：43.78 Kbytes 页数：4 Pages

ROHM

罗姆

MEDIUM POWER TRANSISTOR

Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2.0A) 2) Low saturation voltage, typically (Typ. : −250mV at IC = −1.0A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5731 Applications Small signal low frequency amplifi

文件：44.43 Kbytes 页数：4 Pages

ROHM

罗姆