PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed for high-speed high-voltage switching and is ideal for use in switching elements such as switching regulators and DC/DC converters. FEATURES • New package with dimensions in betwe

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NEC

瑞萨

SILICON TRANSISTOR

PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed for high-speed highvoltage switching and is ideal for use in switching elements such as switching regulators and DC/DC converters. FEATURES • New package with dimensions in be

文件：240.41 Kbytes 页数：8 Pages

RENESAS

瑞萨

DUAL TRANSISTOR (PNP PNP)

Features ● Small package (dual type) ● High voltage and high current ● High hFE ● Excellent hFE linearity ● Complementary to 2SC4944

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HTSEMI

金誉半导体

DUAL TRANSISTOR (PNPPNP)

DUAL TRANSISTOR (PNP+PNP) Features ● Small package (dual type) ● High voltage and high current ● High hFE ● Excellent hFE linearity ● Complementary to 2SC4944

文件：934.94 Kbytes 页数：3 Pages

JIANGSU

长电科技

TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Complementary to 2SC4944

文件：154.98 Kbytes 页数：2 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Complementary to 2SC4944

文件：226.04 Kbytes 页数：3 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Complementary to 2SC4944

文件：226.04 Kbytes 页数：3 Pages

TOSHIBA

东芝

High-Definition CRT Display Video Output Applications

High-Definition CRT Display Video Output Applications Features • High fT : fT=400MHz(typ). • High breakdown voltage : VCEO≥200V(min). • Large current capacitance. • Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP). • Adoption of FBET

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SANYO

三洋

High-voltage Switching Transistor

Features ● High fT : fT=400MHz(typ). ● High breakdown voltage : VCEO ≥ 200V(min). ● Large current capacitance. ● Adoption of FBET process.

文件：41.84 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：321.98 Kbytes 页数：3 Pages

ISC

无锡固电