High-Voltage Driver Applications

High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity.

文件：78.25 Kbytes 页数：3 Pages

SANYO

三洋

HIGH VOLTAGE DRIVER APPLICATION

HIGH VOLTAGE DRIVER APPLICATION ■ FEATURES * High breakdown voltage. * Excellent hFE linearity.

文件：189.12 Kbytes 页数：4 Pages

UTC

友顺

PNP Epitaxial Planar Silicon Transistor

FEATURES ● High breakdown voltage. ● Adoption of MBIT process. ● Excellent hFE linearity.

文件：234.77 Kbytes 页数：6 Pages

BILIN

银河微电

isc Silicon PNP Power Transistor

DESCRIPTION • High breakdown voltage • Low Collector-Emitter Saturation Voltage • High Power Dissipation- : PC= 10W@TC=25℃ ,PC= 10W@Ta=25℃ • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For high voltage driver applications.

文件：316.12 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.

文件：303.5 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.

文件：322.53 Kbytes 页数：3 Pages

ISC

无锡固电

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Breakdown Voltage ● Adoption of MBIT Process ● Excellent hFE Linearity

文件：766.92 Kbytes 页数：3 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：132.25 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features High breakdown voltage, adoption of MBIT process excellent hFE linearity Applications High voltage driver applications.

文件：1.02028 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：62.33 Kbytes 页数：1 Pages

TEL