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2SA1615-251

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

文件:323.37 Kbytes 页数:3 Pages

ISC

无锡固电

2SA1615-252

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

文件:304.31 Kbytes 页数:3 Pages

ISC

无锡固电

2SA1615-Z

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacity:IC(DC)= -10A IC(pulse)=-15A • High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

文件:240.04 Kbytes 页数:2 Pages

ISC

无锡固电

2SA1615-Z

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC

文件:118.88 Kbytes 页数:6 Pages

NEC

瑞萨

2SA1615-Z

P TYPE TTANSISTORS

P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and

文件:187.76 Kbytes 页数:4 Pages

STANSON

司坦森

2SA1615-Z

Silicon Power Transistors

Features ● Large current capacity. ● High hFE and low collector saturation voltage.

文件:41.3 Kbytes 页数:1 Pages

KEXIN

科信电子

2SA1615_15

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件:239.1 Kbytes 页数:7 Pages

RENESAS

瑞萨

2SA1615-Z

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. • Large current capacity: IC(DC) = −10 A, IC(pulse) = −15 A\n• High hFE and low collector saturation voltage: hFE = 200 MIN. (VCE = −2.0 V, IC = −0.5 A) VCE(sat) ≤ −0.25 V (IC = −4.0 A, IB = −0.05 A);

Renesas

瑞萨

技术参数

  • Vcbo (V):

    -30

  • VCEO (V):

    -20

  • Vebo (V):

    -10

  • IC @25 °C (A):

    -10

  • VCE (sat) (V):

    -0.25

  • hFE:

    200-600

  • Pc (W):

    15

  • fT (Typical) (GHz):

    0.18

  • Cob (Typical) (pF):

    220

供应商型号品牌批号封装库存备注价格
RENESAS
TO252
30000000
原装进口中国百强元器件分销企业 专注RENESAS十年 公司大量RENESAS现货 欢迎您的咨询 百年不变 服务至上
询价
NEC
24+
TO-252
86200
新进库存/原装
询价
NEC
12+
TO-251
15000
全新原装,绝对正品,公司现货供应。
询价
NEC
24+
原厂封装
3500
原装现货假一罚十
询价
NEC
24+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
23+
TO-252
20000
原装正品,假一罚十
询价
NEC
2016+
TO-251
4000
只做原装,假一罚十,公司可开17%增值税发票!
询价
NEC
25+
SOT252
2987
只售原装自家现货!诚信经营!欢迎来电
询价
NEC
18+
TO-252
85600
保证进口原装可开17%增值税发票
询价
NEC
98
720
原装正品
询价
更多2SA1615供应商 更新时间2025-12-5 16:16:00