2SA1602A

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)

FORLOWFREQUENCYAMPLIFYAPPLICATION FEATURE ・Superminipackageforeasymounting ・ExcellentlinearityofDCforwardgain ・Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax APPLICATION ForHybridIC,smalltypemachinelowfrequencyvoltageAmplifyappli

2SA1603

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli

2SA1603A

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603AisasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentl

2SA1603Q

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli

2SA1603R

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli

2SA1603S

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli

2SA1603T

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli

2SA1606

High-Voltage Switching,AF 100W Driver Applications

High-VoltageSwitching,AF100WDriverApplications Features ·Micalesspackagefacilitatingmounting. Applications ·High-voltageswitching,AFpoweramplifier,100Woutputpredrivers.

2SA1607

High-Speed Switching Applications

High-SpeedSwitchingApplications Features •Fastswitchingspeed. •Highgain-bandwidthproduct. •Lowsaturationvoltage.

2SA1607

PNP Epitaxial Planar Silicon Transistors

Features ●Fastswitchingspeed. ●Highgain-bandwidthproduct. ●Lowsaturationvoltage. ●Complementaryto2SC4168