TRANSISTOR

AiT-Semi

创瑞科技

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

DESCRIPTION 2SA1235 is a super mini silicon NPN epitaxial type transistor designed with high collector current,small Vce(sat). Complementary with 2SC3440. FEATURE ● Low collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini

文件：125.48 Kbytes 页数：3 Pages

ISAHAYA

谏早电子

Silicon PNP Epitaxia

Features ● Low collector to emitter saturation voltage. ● Excellent linearity nof DC forward current gain. ● Super mini package for easy mounting. ● High collector current. ● High gain band width product.

文件：38.96 Kbytes 页数：1 Pages

KEXIN

科信电子

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

文件：193.21 Kbytes 页数：3 Pages

ISAHAYA

谏早电子