FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

DESCRIPTION 2SA1235 is a super mini silicon NPN epitaxial type transistor designed with high collector current,small Vce(sat). Complementary with 2SC3440. FEATURE ● Low collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini

文件：125.48 Kbytes 页数：3 Pages

ISAHAYA

谏早电子

Silicon PNP Epitaxia

Features ● Low collector to emitter saturation voltage. ● Excellent linearity nof DC forward current gain. ● Super mini package for easy mounting. ● High collector current. ● High gain band width product.

文件：38.96 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low collector to emitter saturation voltage, excellent linearity of DC forward current Gain, high collector current, high gain band width product. Applications Small type motor drive, relay drive, power supply.

文件：818.2 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

文件：193.21 Kbytes 页数：3 Pages

ISAHAYA

谏早电子

三极管

BlueRocket

蓝箭电子

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

文件：193.21 Kbytes 页数：3 Pages

ISAHAYA

谏早电子

PNP Transistors

文件：846.21 Kbytes 页数：2 Pages

KEXIN

科信电子

TRANSISTOR

AiT-Semi

创瑞科技